MOCVD of Ag thin films

The new mixed ligand complex [(n-Bu3P)Ag((CH3)(3)CCOO)] (I) is suggested as precursor for MOCVD of Ag thin films. It was characterized by elemental, T G analysis and by mass-spectrometry. It was shown that gas phase consisted only from monomeric molecules of I. X-ray study of (I) shows that crystal s tructure is build up from dimeric units with van der Waals interactions bet ween them. Ag films were grown on Si and oxide substrates using I and [(Ag( (CH3)(3)CCOO)] (II) precursors by CVD technique in presence of oxygen. The dependence of the films' thickness, orientation and microstructure on the p rocess parameters was defined. The use of the adduct was found to be at lea st 20 times more effective (regarding the film thickness) in comparison to that of II.