Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y2O3-P2O5 thin films

Citation
Jl. Deschanvres et W. Meffre, Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y2O3-P2O5 thin films, J PHYS IV, 11(PR3), 2001, pp. 653-660
Citations number
5
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
653 - 660
Database
ISI
SICI code
1155-4339(200108)11:PR3<653:DBAAAM>2.0.ZU;2-D
Abstract
The deposition of Er or Eu doped Y2O3-P2O5 thin films by an aerosol assiste d MO-CVD atmospheric process is studied. 0.1 to 0.5 mum thick films were ob tained on glass substrates in the temperature range 400 degreesC-580 degree sC. The rare earth luminescence is activated by post annealing. The propert ies of the films were discussed in function of the P2O5 content. For high a nnealing post-deposition treatments the films with less than 15 Mol% P2O5 t ended to crystallise in the yttria phase. The YPO4 phase appeared around 50 Mol% P2O5. Between these concentration limits the films appeared as a diso rdered composite Y-P-O phase and exhibited wide luminescence bands.