A. Wohlfart et al., Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor, J PHYS IV, 11(PR3), 2001, pp. 683-687
We report the growth of highly crystalline and oriented alpha -GaN layers s
howing a porous-ae microstructure. Employing specific CVD conditions, GaN l
ayers with such morphological features were obtained and characterized in d
etail by XRD methods. The layer composition was analysed by XPS, AES as wel
l as RES, and the morphology was investigated by SEM and AFM measurements.