Comparative characterization of nitrogen-rich CNx films prepared by different ICP-CVD techniques

Thin amorphous nitrogen-rich CN, films (NI(C+N) greater than or equal to 0. 5) have been prepared by two inductively coupled plasma chemical vapour dep osition (ICP-CVD) techniques: using transport reactions from a solid carbon source and from CCl4/NH3/Ar and CCl4/N-2/H-2/Ar gas mixtures. Optical emis sion spectroscopy (OES) and quadrupole mass spectrometry were used to deriv e information about the plasma properties. The composition of the films was investigated by Auger electron spectroscopy (AES), wavelength dispersive X -ray (WDX) and elastic recoil detection (ERD) analyses, and the chemical bo nding structure by X-ray photoelectron spectroscopy (,NPS) and Fourier tran sform infrared (FTIR) spectroscopy. In addition, several application releva nt properties (mechanical, optical, electrical) of the nitrogen-rich CNx fi lms were studied. The results of both deposition methods were compared and discussed on the base of the specificities of the processes.