Aluminium nitride synthesis by RPECVD

Aluminium nitride was synthesised by remote microwave plasma enhanced chemi cal vapour deposition. At temperature in the range [823 K - 923 K], AIN thi n films were synthesised by reaction between AlCl3 and a late Ar- N-2-H-2 p ost-discharge. Nitrogen atoms are very likely the. main reactive species of the post-discharge which react with aluminium. trichloride to produce AIN. The composition of the gas phase was studied by optical emission spectrosc opy and NO titration to determine the highest density of nitrogen atoms. Hi ghest deposition rates are close to 3 mum h(-1). Composition of the thin fi lm is strongly dependent on the operating parameters. In most cases, the me asured atomic ratio N/Al is greater than 1.