Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method

Thin films of boron nitride (BN) have been deposited at low temperature by microwave plasma enhanced chemical vapour deposition (PECVD), using borane dimethylamine as boron precursor. Chemically stable and smooth films of hex agonal boron nitride (h-BN) have been synthesised. Infrared transmittance s pectroscopy is used for the phase identification, and also for the determin ation of the orientation of the c-axis in the samples. The influence of the deposition conditions on the film's morphology have been studied, by varyi ng independently the plasma power, the pressure and the precursor flux.