High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)

The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (delta -PHEMT) grown by low-pressure metal organic chem ical vapor deposition (LP-MOCVD) have been fabricated and investigated. Bas ed on the employment of the wide-gap InGaP Schottky layer and delta-doped c arrier supplier, the high breakdown voltages together with good device char acteristics are obtained simultaneously. Furthermore, the newly designed V- shaped InGaAs channel can enhance the carrier confinement effect and increa se the product of carrier concentration and mobility. Experimentally, for 1 x100 mum(2) devices, the gate-to-drain breakdown voltages larger than 40 (3 0) V, the transconductances of 90 (201) mS/mm, and the maximum current dens ities of 646 (846) mA/mm are achieved for the studied single and double del ta -PHEMT, respectively. Meanwhile, the measured f(tau) and f(max) are 12 ( 16) GHz and 28.4 (34) GHz, respectively.