MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

A new heterostructure field-effect transistor (HFET) with GaAs/InGaP camel- like gate and GaAs/InGaAs channel structure has been fabricated by MOCVD. T he studied device exhibits a large barrier height, high breakdown voltage, and low leakage current even at high temperature environments. Experimental ly, for a 1x100 mum(2) device, the gate-drain breakdown voltage and gate le akage current are 52 (31.5) V, and 37 muA/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (480) K. The high drain-source operation voltage over 20 V with low leakage current is also o btained. These good performances provide the promise for high-breakdown and high-temperature operations.