Structure study of thin RPECVD CdxZn1-xS films

Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused s ilica substrates at low pressure in the temperature range of 473-673 K by r emote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C 2H5)(2))(2).C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studi ed by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concent ration gradient along the film thickness was observed. The CdxZn1-xS film i s substitution solid solution with hexagonal texture structure.