Structure and composition investigation of RPECVD SiCN and LPCVD BCN films

The silicon carbonitride films have been synthesised by RPECVD using a mixt ure of ammonia, helium and hexamethyidisilazane Si2NH(CH3)(6) as a volatile single-source precursor, The boron carbonitride thin films have been grown by LPCVD using triethylamine borane complex N(C2H5)(3). BH3 both with and without ammonia. Different techniques such as IR and Raman spectroscopy, el lipsometry, XPS, EDS, SEM, HREM, SAED and XRD using synchrotron radiation w ere used to study physical and chemical properties and structure. These fil ms consist nanocrystals with size of 2-9 nm distributed in amorphous matrix . Analysis of IR spectroscopy and XPS data of the SiCN films showed that si licon atoms form chemical bonds vith nitrogen and carbon atoms.