Group-III nitride growth in production scale MOVPE systems

We have developed the AIX 2000 G3 HT MOVPE system for large scale productio n of nitride semiconductors. Extensive numeric modeling of the reactor cham ber has enabled us to establish process windows for the growth of nitride s emiconductors. We report excellent wafer to wafer, on-wafer and run to run uniformities across all wavelength regions accessible to the InGaN material system. Laser action in GaN epitaxial layers and in InGaN/GaN quantum well heterostructures at optical excitation was achieved in a wide spectral int erval from 370 nm up to 470 nm. The working temperature reached 580 K for t he best multiple quantum well structures.