Study Of SiO2-films deposited by adding N2O or O-2 to TEOS in photo-chemical vapor deposition at room temperature

We have developed a new scheme for SiO2-film preparation in which tetraetho xyorthosilicate (TEOS: Si(OC2H5)(4)) is photo-dissociated by vacuum ultravi olet Xe-2 excimer radiation (lambda = 172 nm). The SiO2-films can be deposi ted at room temperature include a considerable amount of C and H atoms and/ or molecules. They show relative-dielectric constants and leakage currents as low as the films prepared with ozone-assisted CVD. We have tried to avoi d impurity inclusion by adding O-2 or N2O to the raw material TEOS. The add ition of O-2 results in decrease of C-H inclusion. We have evaluated the el ectrical properties and gap-filling characteristics by adding the gas. The SiO2-films prepared with the photo-CVD could be useful for a multi-layer-in ter-connection technologies of CMP-less and free environmental disruption a t ULSI devices processing.