Deposition of SrRuO3 films and SrRuO3/YBa2Cu3O7 heterostructures by pulsedinjection MOCVD

Single liquid source pulsed injection MOCVD technique was applied for the d eposition of epitaxial SrRuO3 films and SrRuO3/YBa2Cu3O7 heterostructures o n various monocrystalline substrates (LaAlO3, SrTiO3, NdGaO3, MgO, YSZ, sap phire). Sr, Y, Ba, Cu 2,2,6,6-tetramethyl-3,5-heptanedionates and Ru 2,4-pe ntanedionate (acetylacetonate) were used as precursor materials, 1,2-dimeth oxyethane as a solvent. Deposition conditions were optimised to obtain epit axial films and heterostructures and the influence of substrate material on films' microstructure and electrical properties was studied. The best SrRu O3/YBa2CU3O7 heterostructures which were insitu deposited at 825 degreesC e xhibited rather sharp superconducting transition at about 91 K and critical current density > 10(6) A/cm(2) at 77 K.