The prospects of reflectometry and ellipsometry with Colorado State University tabletop XUV laser

Citation
Ia. Artioukov et al., The prospects of reflectometry and ellipsometry with Colorado State University tabletop XUV laser, J PHYS IV, 11(PR2), 2001, pp. 451-457
Citations number
20
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR2
Year of publication
2001
Pages
451 - 457
Database
ISI
SICI code
1155-4339(200107)11:PR2<451:TPORAE>2.0.ZU;2-X
Abstract
The capillary discharge ArIX laser (wavelength 46.9nm) is a new device attr active for various applications due to its unique for XUV lasers properties : high average power and compactness. Reflectometry and ellipsometry are am ong them. The first is capable to provide fundamental data on optical const ants of solids which an, still rather limited. Reflection coefficient in th is spectral range is highly sensitive to the presence of an overlayer a the surface of a sample, This hinders bulk optical constants determination, bu t offers the possibility to study chemi cal contamination by ambience, The theory of reflection from a surface with a thin overlayer is developed. It enable! to rigorously include overlayer into reflectometry data processing and derive separately the parameters of bulk anc overlayer. Ellipsometry in general is more powerful than reflectometry method to measure optical cons tants. In addition it offers the accurate methods to measure film thickness and proerties of magnetic materials. Unfortunately high quality analyzers and polarizers are not available in this spectral range, which requires spe cific approach to ellipsometric measurements. We discuss and use for this p urpose Sc/Si multilayer structures.