Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction

Citation
K. Sokolowski-tinten et al., Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction, J PHYS IV, 11(PR2), 2001, pp. 473-477
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR2
Year of publication
2001
Pages
473 - 477
Database
ISI
SICI code
1155-4339(200107)11:PR2<473:TLDIFS>2.0.ZU;2-S
Abstract
Using time-resolved x-ray diffraction ultafast lattice dynamics in fs-laser -excited crystalline bulk Ge and Ge/Si-heterostructures has been studied. T his experimental technique uniquely allows us to observe fast energy transp ort deep into. the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interface .