Highly sensitive determination of carbon-and hydrogen-containing impurities in silicon tetrachloride by gas chromatography

Citation
Va. Krylov et al., Highly sensitive determination of carbon-and hydrogen-containing impurities in silicon tetrachloride by gas chromatography, J ANALYT CH, 56(9), 2001, pp. 844-849
Citations number
20
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ANALYTICAL CHEMISTRY
ISSN journal
10619348 → ACNP
Volume
56
Issue
9
Year of publication
2001
Pages
844 - 849
Database
ISI
SICI code
1061-9348(200109)56:9<844:HSDOCH>2.0.ZU;2-3
Abstract
Procedures were developed for the direct gas-chromatographic determination of impurities of organochlorine substances, chlorosilane. and alkylchlorosi lane in silicon tetrachloride and for the.-as-chromatographic analysis with matrix subtraction by preliminary hydrolysis of silicon tetrachloride and subsequent extraction of organochlorine impurities with an organic solvent. It was found that the major impurities in high-purity silicon tetrachlorid e obtained by the rectification of the by-product in the production of tric hlorosilane are trichlorosilane, methyltrichlorosilane, methyldichlorosilan e, chloroform, and carbon tetrachloride. Detection limits of impurities are 10(-5)-10(-7) Wt %, which is lower than those reported in the literature b y 1-2 orders of magnitude.