Va. Krylov et al., Highly sensitive determination of carbon-and hydrogen-containing impurities in silicon tetrachloride by gas chromatography, J ANALYT CH, 56(9), 2001, pp. 844-849
Procedures were developed for the direct gas-chromatographic determination
of impurities of organochlorine substances, chlorosilane. and alkylchlorosi
lane in silicon tetrachloride and for the.-as-chromatographic analysis with
matrix subtraction by preliminary hydrolysis of silicon tetrachloride and
subsequent extraction of organochlorine impurities with an organic solvent.
It was found that the major impurities in high-purity silicon tetrachlorid
e obtained by the rectification of the by-product in the production of tric
hlorosilane are trichlorosilane, methyltrichlorosilane, methyldichlorosilan
e, chloroform, and carbon tetrachloride. Detection limits of impurities are
10(-5)-10(-7) Wt %, which is lower than those reported in the literature b
y 1-2 orders of magnitude.