Mechanisms of inert gas impact induced interlayer mixing in metal multilayers grown by sputter deposition

Citation
Xw. Zhou et Hng. Wadley, Mechanisms of inert gas impact induced interlayer mixing in metal multilayers grown by sputter deposition, J APPL PHYS, 90(7), 2001, pp. 3359-3366
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
7
Year of publication
2001
Pages
3359 - 3366
Database
ISI
SICI code
0021-8979(20011001)90:7<3359:MOIGII>2.0.ZU;2-B
Abstract
Control of interfacial roughness and chemical mixing is critical in nanomat erials. For example, multilayers composed of similar to 20 Angstrom conduct ive layer sandwiched between two similar to 50 Angstrom ferromagnetic layer s can exhibit giant magnetoresistance (GMR). This property has caused a tre mendous recent increase in hard disk storage capacity, and can potentially result in a new generation of nonvolatile magnetic random access memories. It has been established that good GMR properties can be obtained when the i nterfacial roughness and interlayer mixing of these multilayers are low. Ho wever, flat interfaces in nanoscale multilayers are not thermodynamically s table, and cannot be obtained using thermal energy deposition processes suc h as molecular-beam epitaxy. Hyperthermal energy sputter deposition techniq ues using either plasma or ion-beam gun are able to create nonequilibrium f lat interfaces, and have been shown to produce better GMR multilayers. In t hese processes, however, inert gas ions or neutrals with energies between 5 0 and 200 eV can impact the growth surface. This may be a major source for interlayer mixing. By using a molecular dynamics technique and a reduced or der model, the composition profile across the thickness of multiply repeate d Ni/Cu/Ni multilayers has been calculated as a function of the energy and the relative flux of the inert gas ions or neutrals as well as the layer th ickness. The results indicate that the 50-200 eV inert gas impact caused at omic exchange between adjacent atomic layers near the surface. The probabil ity of exchange increased with impact energy, but decreased with the number of overlayers. The exchange between Ni overlayer and Cu underlayer atoms w as much more significant than that between Cu overlayer and Ni underlayer a toms. As a result, the Ni on Cu interfaces were much more diffuse than the Cu on Ni interfaces, in good agreement with experiments. At very high inert gas flux and impact energy, an increased probability for the underlying Cu atoms to be exchanged to the surface resulted in significant Cu surface se gregation. (C) 2001 American Institute of Physics.