Magnetic field and temperature dependence of terahertz radiation from InAssurfaces excited by femtosecond laser pulses

Citation
M. Hangyo et al., Magnetic field and temperature dependence of terahertz radiation from InAssurfaces excited by femtosecond laser pulses, J APPL PHYS, 90(7), 2001, pp. 3409-3412
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
7
Year of publication
2001
Pages
3409 - 3412
Database
ISI
SICI code
0021-8979(20011001)90:7<3409:MFATDO>2.0.ZU;2-8
Abstract
The magnetic field (0-5 T) and temperature (10-300 K) dependence of teraher tz radiation from InAs surfaces excited by femtosecond laser pulses has bee n studied in detail. The radiation intensity is strongly enhanced under the magnetic field and at low temperatures, which is explained based on simple classical motion of photoexcited electrons under a built-in surface electr ic field and Lorentz force undergoing scattering. The radiation spectra are broad even at low temperatures under high magnetic fields, which suggests that strong electron scattering mechanisms exist for photoexcited electrons at InAs surfaces. (C) 2001 American Institute of Physics.