Influence of the growth conditions and postdeposition treatments upon the grain boundary barrier height of CdTe thin films deposited by close space vapor transport

Authors
Vigil-Galan, O Vaillant, L Mendoza-Perez, R Contreras-Puente, G Vidal-Larramendi, J Morales-Acevedo, A
Citation
O. Vigil-galan et al., Influence of the growth conditions and postdeposition treatments upon the grain boundary barrier height of CdTe thin films deposited by close space vapor transport, J APPL PHYS, 90(7), 2001, pp. 3427-3431
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
7
Year of publication
2001
Pages
3427 - 3431
Database
ISI
SICI code
0021-8979(20011001)90:7<3427:IOTGCA>2.0.ZU;2-7
Abstract
CdTe thin films deposited by close space vapor transport (CSVT) under varia ble growth conditions and postthermal and chemical treatments were studied by means of photoconductivity measurements in the temperature range of 90-3 00 K. The influences of the deposition temperature gradient, the oxygen con tent in the growth chamber, and the CdCl2 treatment and chemical etching up on the intergrain barrier height of CSVT polycrystalline CdTe thin films we re determined. The grain boundary barrier height (E-b phi) as a function of the intensity of the incident light was analyzed, and values of E-b phi un der illumination of 100 mW/cm(2) (AM1) were obtained in each case. These re sults are important for improving CdS/CdTe solar cell performance in the ne ar future. (C) 2001 American Institute of Physics.