Highly sensitive recognition element based on birefringent porous silicon layers

Citation
E. Gross et al., Highly sensitive recognition element based on birefringent porous silicon layers, J APPL PHYS, 90(7), 2001, pp. 3529-3532
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
7
Year of publication
2001
Pages
3529 - 3532
Database
ISI
SICI code
0021-8979(20011001)90:7<3529:HSREBO>2.0.ZU;2-Y
Abstract
Anisotropically nanostructured silicon layers exhibit a strong in-plane bir efringence. Their optical anisotropy parameters are found to be extremely s ensitive to the presence of dielectric substances inside of the pores. Pola rization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligibl e quantities. A variation of the transmitted linearly polarized light inten sity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applica tions. (C) 2001 American Institute of Physics.