M. Fujishima et al., PROPOSAL OF A SCHOTTKY-BARRIER SET AIMING AT A FUTURE INTEGRATED DEVICE, IEICE transactions on electronics, E80C(7), 1997, pp. 881-885
The performances of an SET required for integration are discussed. Con
ventional SETs had several problems such as large leakage current, ins
ufficient voltage gain and so on. To overcome these problems, a new SE
T utilizing Schottky barriers as tunnel junctions is proposed. Its cur
rent characteristics and Coulomb-blockade conditions are calculated an
d the effectiveness for an integrated device is discussed.