A LONG DATA RETENTION SOI DRAM WITH THE BODY REFRESH FUNCTION

SOI (Silicon On Insulator) transistors have certain problems due to th e floating body. These problems become remarkable in the memory cell t ransistors of DRAMs. We propose a new refresh function and circuits fo r SOI DRAMs. And we obtained the result that this refresh Function rem oved the injected hole from the body region and gave stable body poten tial by the device simulation. Therefore we can realize the long data retention characteristics for SOI DRAMs without an increase of the mem ory cell area or an additional refresh operation.