PATTERN-DEPENDENT CHARGING IN PLASMAS - ELECTRON-TEMPERATURE EFFECTS

Citation
Gs. Hwang et Kp. Giapis, PATTERN-DEPENDENT CHARGING IN PLASMAS - ELECTRON-TEMPERATURE EFFECTS, Physical review letters, 79(5), 1997, pp. 845-848
Citations number
17
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
79
Issue
5
Year of publication
1997
Pages
845 - 848
Database
ISI
SICI code
0031-9007(1997)79:5<845:PCIP-E>2.0.ZU;2-8
Abstract
The differential charging of high-aspect-ratio dense structures during plasma etching is studied by two-dimensional Monte Carlo simulations. Enhanced electron shadowing at large electron temperatures is found t o reduce the electron current density to the bottom of narrow trenches , causing buildup of large charging potentials on dielectric surfaces. These potentials alter the local ion dynamics, increase the flux of d eflected ions towards the sidewalls, and result in distorted profiles. The simulation results capture reported experimental trends and revea l the physics of charging damage.