Citation
Yb. Park et Dw. Lee, Effects of Ti and TiN underlayers on electromigration reliability of Al-Cuinterconnects, MAT SCI E B, 87(1), 2001, pp. 70-76
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
87
Issue
1
Year of publication
2001
Pages
70 - 76
Database
ISI
SICI code
0921-5107(20011024)87:1<70:EOTATU>2.0.ZU;2-E
Abstract
The effects of Al underlayer between Ti and TiN on the electromigration (EM
) reliability of Al stack film were compared. And both package-level and co
nventional wafer-level EM tests were performed. Microstructures of underlay
er and Al films were characterized to understand the EM results. The surfac
e roughness of the underlayer was related to the grain size distribution an
d surface roughness of Al film. The higher EM resistance of the Al stacks p
repared with Ti underlayer can be best explained by their better Al (111) t
exture and grain size distribution than those with TiN underlayer. (C) 2001
Elsevier Science B.V. All rights reserved.