Developments of new concept analytical instruments for failure analyses ofsub-100 nm devices

We have developed analytical instruments based on new concepts for failure analyses of devices of 100 nm dimensions or less. They are a sputtered neut ral mass spectrometer with focused ion beam for highly sensitive element an alysis in microarea (10(18) atoms/cm(3) in 30 nm area), transmission electr on microscope (TEM) with electron energy loss spectrometer for chemical bon d analysis in less than 2 nm area, Nanoprober for electrical characteristic s inspection in actual circuits, computed tomography-TEM for three-dimensio nal observation of crystalline defect with I nm spatial resolution, atmosph eric pressure ionization mass spectrometer for trace impurities ppq (parts per quadrillion) analysis in gases, and glow discharge optical emission spe ctrometer for rapid and precise composition analysis. Using these instrumen ts, it was found that the formation of SiO2 or TiOx film by water from tita nic acid ((TiOxH2O)-H-.) is the cause of the high resistivity in a contact (CVD-W/CVD-TiN/Ti/Si) and vaporization of silicon dioxide by phosphorus tri fluoride (PF3) is the cause of voids in interlayer dielectric film borophos phosilicate glass. (C) 2001 Elsevier Science Ltd. All rights reserved.