We have performed transport measurements on intrinsic Josephson junctions i
n misaligned thin films of Tl2Ba2CaCu2O8. This has been done in both zero f
ield and in-plane aligned magnetic fields of up to 5 T. We have compared we
t-etched and ion-milled devices and find that the more precise structure pr
oduced by ion-milling gives superior results. In the case of ion-milled dev
ices we are able to individually switch on up to 50 junctions. For an n-pla
ne field of 3 T there is complete suppression of the critical current. We h
ave seen displaced branches for in-plane fields above 1.5 T. This branching
is due to Josephson flux flow. For in-plane fields greater than 2 T the re
lationship between the maximum flux-flow voltage and the applied field is l
inear. (C) 2001 Elsevier Science B.V. All rights reserved.