Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301

Authors
Perkins, JD Mascarenhas, A Geisz, JF Friedman, DJ
Citation
Jd. Perkins et al., Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301, PHYS REV B, 6412(12), 2001, pp. 1301
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<1301:CNLIGW>2.0.ZU;2-W
Abstract
We report electroreflectance spectra between 1 and 4 eV for GaAs1-xNx sampl es with x<3%. In addition to four intrinsic GaAs transitions, three nitroge n-induced optical transitions, E+, E+ + <Delta>(0), and E*, were observed. The weak and heretofore unknown E* transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the similar to3 e V intrinsic E-1 transition. Opposite to E+, E* decreases in energy with inc reasing nitrogen content. Furthermore, in the dilute limit, both E+ and E* appear to converge to the known conduction-band-resonant nitrogen-impurity level N-x.