Si-H clusters, defects, and hydrogenated silicon - art. no. 125203

Citation
Ro. Jones et al., Si-H clusters, defects, and hydrogenated silicon - art. no. 125203, PHYS REV B, 6412(12), 2001, pp. 5203
Citations number
52
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5203:SCDAHS>2.0.ZU;2-5
Abstract
All-electron density functional methods have been used to calculate the str uctures and energies of silicon/hydrogen clusters with up to 148 atoms. Vib ration frequencies are calculated for those clusters with less than 75 atom s. In addition to hydrogen-terminated clusters based on the structures of b ulk Si, we study structures involving vacancies. divacancies, and additiona l H atoms. The results are compared with earlier work and provide vibration fingerprints that should aid the interpretation of measurements (such as i nfrared spectra) of hydrogenated crystalline and amorphous silicon.