Efficient exciton dissociation via two-step photoexcitation in polymeric semiconductors - art. no. 125211

Citation
C. Silva et al., Efficient exciton dissociation via two-step photoexcitation in polymeric semiconductors - art. no. 125211, PHYS REV B, 6412(12), 2001, pp. 5211
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5211:EEDVTP>2.0.ZU;2-K
Abstract
We report that exciton dissociation occurs within 150 fs during ultrafast p hotoexcitation at moderately high fluence, with similar to 10% quantum effi ciency, in a model electroluminescent pi -conjugated polymer. This is appar ently inconsistent with the otherwise well-supported view that spin-singlet electron-hole pairs (excitons) are the primary photoexcitations. However, we demonstrate that resonant sequential transitions account quantitatively for the photoinduced polaron-pair yield, with the lowest (1 B-a) exciton as an intermediate. Efficient exciton dissociation occurs either from the res ulting high-energy, even-parity (A(g)) states, or during ultrafast thermali zation. The yield of photoinduced polarons, on the other hand, is <0.1% und er continuous-wave excitation, where access to high-energy states by sequen tial excitation is not significant.