Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor - art. no. 125314

Authors
Schapers, T Nitta, J Heersche, HB Takayanagi, H
Citation
T. Schapers et al., Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor - art. no. 125314, PHYS REV B, 6412(12), 2001, pp. 5314
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5314:IFSFT>2.0.ZU;2-L
Abstract
An interference ferromagnet/semiconductor/ferromagnet transistor is propose d, where the relative conductance difference between parallel and antiparal lel magnetization oscillates as a function of gate voltage. The characteris tics of a one-dimensional as well as a two-dimensional structure are calcul ated and compared. In both cases the interferences result in an enhanced sp in signal. It is shown that by using the spin filtering effect of an interf ace barrier the signal can be further increased.