Theory of ballistic electron emission microscopy - art. no. 125408

Citation
Da. Pearson et Lj. Sham, Theory of ballistic electron emission microscopy - art. no. 125408, PHYS REV B, 6412(12), 2001, pp. 5408
Citations number
61
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5408:TOBEEM>2.0.ZU;2-9
Abstract
A theory of ballistic electron emission microscopy is presented that incorp orates constant-tunnel-current feedback and models the band-structure and s pace-charge effects on the electron transmission. The computation is beyond the effective-mass approximation but short of being from first principles. The transmission coefficient includes detailed symmetry treatments of the Gamma-, L-, and X-point semiconductor conduction channels and the three-dim ensional k-space current injection dependency. This approach naturally lead s to the inclusion of multiple current channels, i.e., simultaneous inclusi on of several propagating and evanescent bands of various symmetry types. W e investigate the effects of the model parameters on the I-V spectra and co mpare our predictions to experiment, yielding fairly good agreement. We als o compare theoretical and experimental Au/GaAs(001) dI/dV data and find tha t the L point does not contribute to an observable threshold and that the c orresponding experimental feature is due instead to band-structure effects.