Ce. Botez et al., Temperature dependence of surface roughening during homoepitaxial growth on Cu(001) - art. no. 125427, PHYS REV B, 6412(12), 2001, pp. 5427
X-ray scattering has been used to study the roughening of the Cu(001) surfa
ce during homoepitaxial growth. as a function of temperature. Between 370 a
nd 160 K. the mean-square roughness sigma (2), obtained from specular refle
ctivity data, was found to increase as a power law sigma (2)=Theta (2 beta)
for coverages Theta, ranging from 3 to 96 ML. The roughening exponent beta
was observed to depend on the temperature of the substrate: it monotonical
ly increases with decreasing temperature from beta approximate to 1/3 at T=
370 K to beta approximate to 1/2, at T = 200 K. At 110 K a smoother growth
re-enters in the presence of a large vacancy concentration in the deposite
d film.