Temperature dependence of surface roughening during homoepitaxial growth on Cu(001) - art. no. 125427

Citation
Ce. Botez et al., Temperature dependence of surface roughening during homoepitaxial growth on Cu(001) - art. no. 125427, PHYS REV B, 6412(12), 2001, pp. 5427
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5427:TDOSRD>2.0.ZU;2-X
Abstract
X-ray scattering has been used to study the roughening of the Cu(001) surfa ce during homoepitaxial growth. as a function of temperature. Between 370 a nd 160 K. the mean-square roughness sigma (2), obtained from specular refle ctivity data, was found to increase as a power law sigma (2)=Theta (2 beta) for coverages Theta, ranging from 3 to 96 ML. The roughening exponent beta was observed to depend on the temperature of the substrate: it monotonical ly increases with decreasing temperature from beta approximate to 1/3 at T= 370 K to beta approximate to 1/2, at T = 200 K. At 110 K a smoother growth re-enters in the presence of a large vacancy concentration in the deposite d film.