Carbon-acceptor-induced cascade scattering by acoustic phonons above the (e,A(0)) threshold in GaAs - art. no. 113205

Below the E-0 band gap of GaAs the transitions of free electrons to bound i mpurity states play an important role. Our study of Raman scattering above the (e,A(0)) threshold at 2 K shows that the electrons are scattered by aco ustic phonons before successively being scattered by one LO phonon and fina lly recombining the holes bound to the acceptors. This finding indicates on e of important mechanisms of relaxation of the hot electrons excited above the minimum of conduction band.