Strong coupling and dressed states of an interface island in a pillar semiconductor microcavity - art. no. 113307

We present a theoretical scheme to investigate the coupled states of a zero -dimensional semiconductor structure and the confined modes of a pillar mic rocavity, taking into account interacting exciton states and both coherent and incoherent dynamical processes. For quantum-well monolayer fluctuations we find that the frequency of the cavity modes can be tuned in such a way that both exciton and biexciton states are in the strong coupling regime. T he calculated luminescence spectra are interpreted in terms of transitions between the dressed states of the composite radiation-matter system.