Magnetization of Sn1-xGdxTe - art. no. 115210

The magnetization of Sn1-xGdxTe for different concentrations of holes and x values up to 0.1 has been measured by means of both the vibrating sample m agnetometer and cantilever techniques. The cantilever measurements were car ried out at mK temperatures. The strength of the pair exchange interaction, -J(P)/k(B), was found to depend on the concentration of holes with a maxim um value of about 1 K in the "resonant" concentration range between 2.6 x 1 0(20) cm(-3) and 4.2 x 10(20) cm(-3). No magnetization steps were observed even at temperatures of 30 mK. We suggest that this absence of steps is a r esult of the long range of the exchange interaction in this system.