Enhanced terrace stability for preparation of step-free Si(001)-(2x1) surfaces - art. no. 136103

We show that depositing Si white annealing patterned Si(001)-(2 x 1) substr ates at sublimation temperatures enhances terrace stability, permitting lar ger step-free areas to be produced in a given time than possible by anneali ng alone. We confirm this enhanced terrace stability using real-time low-en ergy electron microscopy observations, and quantitative microscopic modelin g of step dynamics. Our measurements can be used to estimate the lateral va riation in adatom concentration across large terraces, and to estimate an a datom diffusion length lambda approximate to 10-30 mum at 1000 degreesC.