Some aspects of SiC CVD epitaxy

A brief comparative analysis of techniques for the CVD epitaxy of SiC is ma de. Two tendencies in the use of inner reactor equipment are distinguished. Irrespective of the design features and the active gases used, chemical re actions of hydrogen with the interior of the reactor occur concurrently wit h the epitaxial growth. These reactions control the actual [C]/[Si] ratio i n the gas phase and in part determine the background impurity concentration in pure epilayers. (C) 2001 MAIK "Nauka/Interperiodica".