Specific features of the liquid-phase epitaxial growth of SiC epilayers invacuum

Authors
Bauman, DA Gavrilin, AV Ivantsov, VA Morozov, AM Kuznetsov, NI
Citation
Da. Bauman et al., Specific features of the liquid-phase epitaxial growth of SiC epilayers invacuum, SEMICONDUCT, 35(10), 2001, pp. 1132-1134
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
10
Year of publication
2001
Pages
1132 - 1134
Database
ISI
SICI code
1063-7826(2001)35:10<1132:SFOTLE>2.0.ZU;2-K
Abstract
4H-SiC epilayers were grown by a liquid-phase epitaxy in vacuum. It was fou nd that the seed layer with steps characteristic of liquid-phase epitaxy sh ould be preliminary deposited on the substrate. It is demonstrated that gro wth in a vacuum leads to a decrease in the concentration of uncompensated c arriers N-d - N-a to the level of 2 x 10(16) cm(-3). (C) 2001 MAIK "Nauka/I nterperiodica".