4H-SiC epilayers were grown by a liquid-phase epitaxy in vacuum. It was fou
nd that the seed layer with steps characteristic of liquid-phase epitaxy sh
ould be preliminary deposited on the substrate. It is demonstrated that gro
wth in a vacuum leads to a decrease in the concentration of uncompensated c
arriers N-d - N-a to the level of 2 x 10(16) cm(-3). (C) 2001 MAIK "Nauka/I
nterperiodica".