Density of localized states in (Pb0.78Sn0.22)(0.95)In0.05Te solid solutions

Citation
Sa. Nemov et al., Density of localized states in (Pb0.78Sn0.22)(0.95)In0.05Te solid solutions, SEMICONDUCT, 35(10), 2001, pp. 1144-1146
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
10
Year of publication
2001
Pages
1144 - 1146
Database
ISI
SICI code
1063-7826(2001)35:10<1144:DOLSI(>2.0.ZU;2-K
Abstract
The hopping conductivity and the Seebeck coefficient have been measured in Pb0.78Sn0.22Te with 5 at. % In and supplementary donor doping with Cl. The experimental data obtained are compared with similar results for supplement ary acceptor doping with Tl. At temperatures of 150 K and higher, the therm oelectric power changes its sign from positive to negative on the introduct ion in sufficient amounts of either donors or acceptors. An analysis of the dependence of the thermoelectric power on the content of supplementary don ors and acceptors yields the density of localized indium states as a functi on of energy. The function is essentially nonmonotonic, exhibiting both a d ensity-of-states peak and a minimum between this peak and the conduction ba nd. (C) 2001 MAIK "Nauka/Interperiodica".