Random potential relief and extrinsic photoconductivity of compensated germanium

Citation
Yp. Druzhinin et Eg. Chirkova, Random potential relief and extrinsic photoconductivity of compensated germanium, SEMICONDUCT, 35(10), 2001, pp. 1151-1154
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
10
Year of publication
2001
Pages
1151 - 1154
Database
ISI
SICI code
1063-7826(2001)35:10<1151:RPRAEP>2.0.ZU;2-E
Abstract
A photoconductivity spectrum normalized to the optical absorption of compen sated germanium is simulated at low temperatures kT much less than W (where W denotes the energy scale of the random potential that stems from impurit y Coulomb interaction). By fitting the simulated spectrum to the experiment al data, the value of W and the occupancy of the shallow-donor impurity ban d are estimated. A weak energy dependence of the mean free path of electron s in the random potential relief is inferred. (C) 2001 MAIK "Nauka/Interper iodica".