Thermoelectric figure of merit of a p-n junction

Authors
Ravich, YI Pshenai-Severin, DA
Citation
Yi. Ravich et Da. Pshenai-severin, Thermoelectric figure of merit of a p-n junction, SEMICONDUCT, 35(10), 2001, pp. 1161-1165
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
10
Year of publication
2001
Pages
1161 - 1165
Database
ISI
SICI code
1063-7826(2001)35:10<1161:TFOMOA>2.0.ZU;2-4
Abstract
The thermoelectric figure of merit of a semiconductor p-n junction is calcu lated in terms of the diode theory taking account of the bipolar thermal co nductivity. The thermoelectric figure of merit of a Bi2Te3 diode is estimat ed and it is shown that the Ioffe criterion may be at the same level as the best modern thermoelectric materials but cannot exceed unity. (C) 2001 MAI K "Nauka/Interperiodica".