Special features of photoelectric properties of nanostructured films of hydrogenated silicon

Nanostructured Si films differing in hydrogen content, in the forms of Si-H bonds, and in certain characteristics of Si inclusions in an amorphous mat rix (volume fraction, size, and structure) were studied. The behavior commo n to all the studied films, i.e., an increase in the defect density and non monotonic enhancement of photoconductivity at the "red wing" of the spectra l characteristic compared to a-Si:H, was assessed. At the same time, there are films with either enhanced or reduced photoconductivity compared to a-S i:H. (C) 2001 MAIK "Nauka/Interperiodica".