High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m)

Authors
Aydaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation
M. Aydaraliev et al., High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m), SEMICONDUCT, 35(10), 2001, pp. 1208-1212
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
10
Year of publication
2001
Pages
1208 - 1212
Database
ISI
SICI code
1063-7826(2001)35:10<1208:HPIDHL>2.0.ZU;2-3
Abstract
InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda = 3.3 mum, T = 7 7 K) yield a multimode power of 1.56 W in pulsed operation (pulse width 30 mus, repetition frequency f = 500 Hz) and 160 mW in the continuous-wave (CW ) case. In the single-mode CW operation, the power is 18.7 mW. It is shown that heating of the active region is responsible for sublinear light-curren t characteristics in "long-cavity" lasers, whereas in "short-cavity" (L = 1 40-300 mum) lasers the power is mainly limited by internal losses. (C) 2001 MAIK "Nauka/Interperiodica".