Strong enhancement of the optical emission at THz sidebands from a THz-fiel
d driven quantum well in the presence of a dc bias is predicted. The proces
s of the THz/optical mixing is formulated as the interaction of the inciden
t light with THz-dressed excitons. This allows one to find nonperturbative
analytic expressions for the conversion efficiency of the fundamental to th
e THz sidebands. A maximum efficiency of a few percent is predicted for a s
ingle GaAs quantum well, and ways for its further enhancement are discussed
. (C) 2001 Elsevier Science Ltd. All rights reserved.