Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystal lized by rapid Joule heating induced by an electrical current flowing in 10 0-nm-thick Cr strips formed adjacently to 200-nm-thick SiO2 intermediate la yers. 3-mus-pulsed voltages were applied to the Cr strips. Melting of the C r strips caused a high Joule heating intensity of about 1 x 10(6) W/cm(2). Raman scattering measurements revealed complete crystallization of the sili con films at a Joule heating energy of 1.9 J/cm(2) via the SiO2 intermediat e layer. Transmission electron microscopy measurements confirmed a crystall ine grain size of 50-100 nm. 1-mum-long crystalline grain growth was also o bserved just beneath the edge of the Cr strips. The electrical conductivity increased from 10(-5) S/cm to 0.3 S/cm for 7 x 10(17)-cm(-3)-phosphorus-do ped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defec t states at the mid gap of 8.0 x 10(17) cm(-3). Oxygen plasma treatment at 250 degreesC and 100 W for 5 min reduced the density of the defect states t o 2.7 x 10(17) cm(-3).