On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses

Authors
Wautelet, M Dauchot, JP Hecq, M
Citation
M. Wautelet et al., On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses, APPL PHYS A, 73(4), 2001, pp. 425-427
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
4
Year of publication
2001
Pages
425 - 427
Database
ISI
SICI code
0947-8396(200110)73:4<425:OTMODA>2.0.ZU;2-Q
Abstract
The migration of defects in light-irradiated microelectromechanical systems (MEMS) is treated theoretically. The effects of temperature gradients on a tomic demixing are considered. It is found that, when the migration energy of defects and impurities is less than about 0.5 eV, their migration has to be introduced in the modelling of ageing of MEMS.