M. Wautelet et al., On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses, APPL PHYS A, 73(4), 2001, pp. 425-427
The migration of defects in light-irradiated microelectromechanical systems
(MEMS) is treated theoretically. The effects of temperature gradients on a
tomic demixing are considered. It is found that, when the migration energy
of defects and impurities is less than about 0.5 eV, their migration has to
be introduced in the modelling of ageing of MEMS.