c-axis-textured LiNbO3 thin films on Si (111) substrates

Citation
Sd. Cheng et al., c-axis-textured LiNbO3 thin films on Si (111) substrates, APPL PHYS A, 73(4), 2001, pp. 511-514
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
4
Year of publication
2001
Pages
511 - 514
Database
ISI
SICI code
0947-8396(200110)73:4<511:CLTFOS>2.0.ZU;2-N
Abstract
We have successfully prepared highly c-axis-textured LiNbO3 films on hydrog en-terminated Si (111) substrate using sol-gel spin-coating and rapid therm al annealing. These highly c-axis-textured films were obtained with a prehe ating at 300 degreesC for 15 min followed by a rapid thermal annealing at 5 00-700 degreesC for 120 s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO3 films is very usef ul in integrated optics devices and metal-ferroelectric-semiconductor nonvo latile memory applications.