In situ threshold photoemission yields correlated to surface reconstructions of InAs (001)

Threshold photoemission yields for As and In terminated reconstructions of InAs (001) are measured in situ and the variation of the photoyield is corr elated with the surface stoichiometry. A significant excess in the measured photoelectron yield is found for the In terminated surfaces. These results are compared to a semiempirical model based on density-functional theory c alculations of the surface local densities of states for the As terminated beta2-(2x4) and newly predicted zeta-(4x2) reconstructions. The calculation s are in good agreement with the measured trends, and provide a basis for t he interpretation of threshold photoemission sensor signatures. (C) 2001 Am erican Institute of Physics.