Paramagnetism and antiferromagnetic d-d coupling in GaMnN magnetic semiconductor

Citation
M. Zajaac et al., Paramagnetism and antiferromagnetic d-d coupling in GaMnN magnetic semiconductor, APPL PHYS L, 79(15), 2001, pp. 2432-2434
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
15
Year of publication
2001
Pages
2432 - 2434
Database
ISI
SICI code
0003-6951(20011008)79:15<2432:PAADCI>2.0.ZU;2-3
Abstract
The magnetization of Ga1-xMnxN (x <0.1) crystals was measured as a function of the magnetic field and temperature. Paramagnetic behavior typical of sp in S=5/2 expected for Mn2+ (d(5)) magnetic centers was observed in the temp erature range of 2 K <T < 300 K. On the other hand, antiferromagnetic coupl ing between Mn ions was clearly visible. The nearest neighbor (NN) coupling constant J(NN)/k(B)=-1.9 K was estimated from the temperature dependence o f the magnetization. (C) 2001 American Institute of Physics.