Influence of structure development on atomic layer deposition of TiO2 thinfilms

Authors
Aarik, J Karlis, J Mandar, H Uustare, T Sammelselg, V
Citation
J. Aarik et al., Influence of structure development on atomic layer deposition of TiO2 thinfilms, APPL SURF S, 181(3-4), 2001, pp. 339-348
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
181
Issue
3-4
Year of publication
2001
Pages
339 - 348
Database
ISI
SICI code
0169-4332(20010921)181:3-4<339:IOSDOA>2.0.ZU;2-S
Abstract
Microstructure of titanium dioxide (TiO2) thin films grown in the atomic la yer deposition (ALD) process from titanium ethoxide (Ti(OCH2CH3)(4)) and wa ter (H2O) vapor was studied. It was revealed that formation of crystalline (anatase) phase in the films at 200 degreesC and higher substrate temperatu res resulted in considerable surface roughening and increase in the growth rate. The effect most markedly contributed to the film growth at 200 degree sC. At this temperature, the average growth rate increased 1.4 times with t he increase of film thickness from about 100 to 280 nm. (C) 2001 Elsevier S cience B.V. All rights reserved.